Product Summary

The BSM150GT120DN2 is a IGBT power module.

Parametrics

BSM150GT120DN2 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)collector-gate voltage RGE=20kΩ:1200V; (3)DC collector current: TC=25℃:200A, TC=80℃:150A; (4)pulsed collector current,tp=1ms:TC=25℃:400A, TC=80℃:300A; (5)power dissipation per IGBT TC=25℃:1250W; (6)chip temperature:+150℃; (7)storage temperature:-55℃ to +150℃.

Features

BSM150GT120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GT120DN2
BSM150GT120DN2

Infineon Technologies

IGBT Modules 1200V 150A TRIPACK

Data Sheet

0-1: $155.20
1-10: $139.67
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GAL120DLCK
BSM100GAL120DLCK

Infineon Technologies

IGBT Modules 1200V 100A CHOPPER

Data Sheet

0-1: $44.53
1-10: $40.07
BSM100GAL120DN2
BSM100GAL120DN2

Infineon Technologies

IGBT Modules 1200V 100A CHOPPER

Data Sheet

Negotiable 
BSM100GAR120DN2
BSM100GAR120DN2

Infineon Technologies

IGBT Transistors 1200V 100A DUAL

Data Sheet

Negotiable 
BSM100GB120DLC
BSM100GB120DLC

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
BSM100GB120DN2
BSM100GB120DN2

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $82.74
1-10: $74.47